Atomic layer deposition of nickel–cobalt spinel thin films
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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10
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Dalton Transactions, Volume 46, issue 14, pp. 4796-4805
Abstract
We report the atomic layer deposition (ALD) of high-quality crystalline thin films of the spinel-oxide system (Co1−xNix)3O4. These spinel oxides are ferrimagnetic p-type semiconductors, and promising material candidates for several applications ranging from photovoltaics and spintronics to thermoelectrics. The spinel phase is obtained for Ni contents exceeding the x = 0.33 limit for bulk samples. It is observed that the electrical resistivity decreases continuously with x while the magnetic moment increases up to x = 0.5. This is in contrast to bulk samples where a decrease of resistivity is not observed for x > 0.33 due to the formation of a rock-salt phase. From UV-VIS-NIR absorption measurements, a change from distinct absorption edges for the parent oxide Co3O4 to a continuous absorption band ranging deep into the near infrared for 0 < x ≤ 0.5 was observed. The conformal deposition of dense films on high-aspect-ratio patterns is demonstrated.Description
| openaire: EC/FP7/339478/EU//LAYERENG-HYBMAT
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Hagen, D, Tripathi, T & Karppinen, M 2017, 'Atomic layer deposition of nickel–cobalt spinel thin films', Dalton Transactions, vol. 46, no. 14, pp. 4796-4805. https://doi.org/10.1039/C7DT00512A