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Synchrotron X-ray topography investigation on dislocation propagation in heavily arsenic-doped silicon crystal necks
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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Journal of Crystal Growth, Volume 677
Abstract
Geometric analysis of synchrotron X-ray topographs of samples cut from heavily arsenic doped silicon crystal neck were used for the determination of the directions and the Burgers vectors of dislocations, which revealed their type. Straight dislocation lines in heavily As-doped silicon neck were observed in addition to easily eliminated half-loop dislocations. The straight dislocations were more resilient and disappeared later during the neck growth. Growth of a structural crystal body proved that the neck was dislocation free, but the straight dislocations associated with the heavy As-doping likely necessitate a longer neck growth than could be used in lightly doped silicon crystals.
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Lankinen, A, Tuomi, T O, Anttila, O, Sintonen, S, Kostamo, P, McNally, P J & Paulmann, C 2026, 'Synchrotron X-ray topography investigation on dislocation propagation in heavily arsenic-doped silicon crystal necks', Journal of Crystal Growth, vol. 677, 128459. https://doi.org/10.1016/j.jcrysgro.2025.128459