Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorBorodin, B Ren_US
dc.contributor.authorAlekseev, P Aen_US
dc.contributor.authorDunaevskiy, M Sen_US
dc.contributor.authorKhayrudinov, Ven_US
dc.contributor.authorLipsanen, Hen_US
dc.contributor.departmentDepartment of Electronics and Nanoengineeringen
dc.contributor.groupauthorHarri Lipsanen Groupen
dc.contributor.organizationIoffe Instituteen_US
dc.date.accessioned2020-01-17T13:32:36Z
dc.date.available2020-01-17T13:32:36Z
dc.date.issued2019en_US
dc.description.abstractThis work presents the results of an investigation of in plane horizontal GaAs nanowires by Scanning Probe Microscopy (SPM) methods. Topography and a local conductivity map of the horizontal nanowire with axial p-n junction are obtained. The distribution of doping and position of p-n junctions in nanowires are visualized. The I-V curves of differently doped parts of nanowires were measured. These data can be important for the understanding of the doping incorporation mechanism of GaAs nanowires.en
dc.description.versionPeer revieweden
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationBorodin, B R, Alekseev, P A, Dunaevskiy, M S, Khayrudinov, V & Lipsanen, H 2019, ' Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy ', Journal of Physics: Conference Series, vol. 1410, no. 1, 012228 . https://doi.org/10.1088/1742-6596/1410/1/012228en
dc.identifier.doi10.1088/1742-6596/1410/1/012228en_US
dc.identifier.issn1742-6588
dc.identifier.issn1742-6596
dc.identifier.otherPURE UUID: d79e4245-0f57-4a3f-b6a3-ca8187932bbfen_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/d79e4245-0f57-4a3f-b6a3-ca8187932bbfen_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/40208337/Borodin_2019_J._Phys._Conf._Ser._1410_012228.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/42580
dc.identifier.urnURN:NBN:fi:aalto-202001171695
dc.language.isoenen
dc.publisherIOP Publishing Ltd.
dc.relation.ispartofseriesJournal of Physics: Conference Seriesen
dc.relation.ispartofseriesVolume 1410en
dc.rightsopenAccessen
dc.titleAnalysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopyen
dc.typeA4 Artikkeli konferenssijulkaisussafi
dc.type.versionpublishedVersion

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