Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy
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en
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Journal of Physics: Conference Series, Volume 1410, issue 1
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This work presents the results of an investigation of in plane horizontal GaAs nanowires by Scanning Probe Microscopy (SPM) methods. Topography and a local conductivity map of the horizontal nanowire with axial p-n junction are obtained. The distribution of doping and position of p-n junctions in nanowires are visualized. The I-V curves of differently doped parts of nanowires were measured. These data can be important for the understanding of the doping incorporation mechanism of GaAs nanowires.Description
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Borodin, B R, Alekseev, P A, Dunaevskiy, M S, Khayrudinov, V & Lipsanen, H 2019, 'Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy', Journal of Physics: Conference Series, vol. 1410, no. 1, 012228. https://doi.org/10.1088/1742-6596/1410/1/012228