Formation of graphene atop a Si adlayer on the C-face of SiC

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorLi, Junen_US
dc.contributor.authorWang, Qingxiaoen_US
dc.contributor.authorHe, Guoweien_US
dc.contributor.authorWidom, Michaelen_US
dc.contributor.authorNemec, Lydiaen_US
dc.contributor.authorBlum, Volkeren_US
dc.contributor.authorKim, Moonen_US
dc.contributor.authorRinke, Patricken_US
dc.contributor.authorFeenstra, Randall M.en_US
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.groupauthorComputational Electronic Structure Theoryen
dc.contributor.organizationCarnegie Mellon Universityen_US
dc.contributor.organizationUniversity of Texas at Dallasen_US
dc.contributor.organizationFritz-Haber-Institut der Max-Planck-Gesellschaften_US
dc.contributor.organizationDuke Universityen_US
dc.date.accessioned2019-09-20T11:14:26Z
dc.date.available2019-09-20T11:14:26Z
dc.date.issued2019-08-19en_US
dc.description.abstractThe structure of the SiC(000 (1) over bar) surface, the C-face of the {0001} SiC surfaces, is studied as a function of temperature and of pressure in a gaseous environment of disilane (Si2H6). Various surface reconstructions are observed, both with and without the presence of an overlying graphene layer (which spontaneously forms at sufficiently high temperatures). Based on cross-sectional scanning transmission electron microscopy measurements, the interface structure that forms in the presence of the graphene is found to contain 1.4-1.7 monolayers (ML) of Si, a somewhat counter-intuitive result since, when the graphene forms, the system is actually under C-rich conditions. Using ab initio thermodynamics, it is demonstrated that there exists a class of Si-rich surfaces containing about 1.3 ML of Si that are stable on the surface (even under C-rich conditions) at temperatures above similar to 400 K. The structures that thus form consist of Si adatoms atop a Si adlayer on the C-face of SiC, with or without the presence of overlying graphene.en
dc.description.versionPeer revieweden
dc.format.extent12
dc.format.extent1-12
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationLi, J, Wang, Q, He, G, Widom, M, Nemec, L, Blum, V, Kim, M, Rinke, P & Feenstra, R M 2019, ' Formation of graphene atop a Si adlayer on the C-face of SiC ', Physical Review Materials, vol. 3, no. 8, 084006, pp. 1-12 . https://doi.org/10.1103/PhysRevMaterials.3.084006en
dc.identifier.doi10.1103/PhysRevMaterials.3.084006en_US
dc.identifier.issn2475-9953
dc.identifier.otherPURE UUID: b36ec352-921b-4ab9-a48a-09c2df7aaf13en_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/b36ec352-921b-4ab9-a48a-09c2df7aaf13en_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/36632134/PhysRevMaterials.3.084006.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/40337
dc.identifier.urnURN:NBN:fi:aalto-201909205363
dc.language.isoenen
dc.publisherAmerican Physical Society
dc.relation.ispartofseriesPhysical Review Materialsen
dc.relation.ispartofseriesVolume 3, issue 8en
dc.rightsopenAccessen
dc.subject.keywordSURFACE RECONSTRUCTIONSen_US
dc.subject.keywordEPITAXIAL GRAPHENEen_US
dc.subject.keywordMOLECULAR-DYNAMICSen_US
dc.subject.keywordGAN(0001)en_US
dc.titleFormation of graphene atop a Si adlayer on the C-face of SiCen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion

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