Positron annihilation spectroscopy for the determination of thickness and defect profile in thin semiconductor layers
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© 2007 American Physical Society (APS). This is the accepted version of the following article: Zubiaga, A. & Garcia, J. A. & Plazaola, F. & Tuomisto, Filip & Zuniga-Perez, J. & Munoz-Sanjose, V. 2007. Positron annihilation spectroscopy for the determination of thickness and defect profile in thin semiconductor layers. Physical Review B. Volume 75, Issue 20. 205305/1-10. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.75.205305, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.75.205305.
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2007
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Mcode
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Language
en
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205305/1-10
Series
Physical Review B, Volume 75, Issue 20
Abstract
We present a method, based on positron annihilation spectroscopy, to obtain information on the defect depth profile of layers grown over high-quality substrates. We have applied the method to the case of ZnO layers grown on sapphire, but the method can be very easily generalized to other heterostructures (homostructures) where the positron mean diffusion length is small enough. Applying the method to the ratio of W and S parameters obtained from Doppler broadening measurements, W∕S plots, it is possible to determine the thickness of the layer and the defect profile in the layer, when mainly one defect trapping positron is contributing to positron trapping at the measurement temperature. Indeed, the quality of such characterization is very important for potential technological applications of the layer.Description
Keywords
ZnO, positron annihilation, defect profile, film thickness
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Citation
Zubiaga, A. & Garcia, J. A. & Plazaola, F. & Tuomisto, Filip & Zuniga-Perez, J. & Munoz-Sanjose, V. 2007. Positron annihilation spectroscopy for the determination of thickness and defect profile in thin semiconductor layers. Physical Review B. Volume 75, Issue 20. 205305/1-10. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.75.205305