Temperature dependence of droop onset in optically pumped intrinsic InGaAs/InP heterostructures
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© 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap
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School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2013
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Language
en
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081123/1-4
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Applied Physics Letters, Volume 102, Issue 8
Abstract
Although conventional III-V compound semiconductors are often considered not to exhibit an efficiency droop, a pronounced low temperature droop was recently measured in AlGaInP/GaAs multi-quantum well structures. In this work, we investigate the efficiency droop in simple optically pumped lattice matched InGaAs/InP single well heterostructures to exclude charge transport related effects from the measurements. The results show that droop is present in this very simplistic setup and, furthermore, starts approximately at the same carrier density as in typical III-N structures. Our results suggest that in its most fundamental form, droop can be explained by Auger-like processes.Description
Keywords
III‐V semiconductors, photoelectric conversion, quantum mechanics, laser efficiency, materials properties
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Citation
Olsson, Anders & Aierken, Abuduwayiti & Oksanen, Jani & Suihkonen, Sami & Lipsanen, Harri & Tulkki, Jukka. 2013. Temperature dependence of droop onset in optically pumped intrinsic InGaAs/InP heterostructures. Applied Physics Letters. Volume 102, Issue 8. P. 081123/1-4. ISSN 0003-6951 (printed). DOI: 10.1063/1.4794404.