1D Crystallographic Etching of Few-Layer WS2

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorLi, Shishengen_US
dc.contributor.authorLin, Yung Changen_US
dc.contributor.authorChiew, Yilingen_US
dc.contributor.authorDai, Yunyunen_US
dc.contributor.authorNing, Zixuanen_US
dc.contributor.authorZhang, Yamingen_US
dc.contributor.authorNakajima, Hideakien_US
dc.contributor.authorLim, Hong Enen_US
dc.contributor.authorWu, Jingen_US
dc.contributor.authorNeitoh, Yasuhisaen_US
dc.contributor.authorOkazaki, Toshiyaen_US
dc.contributor.authorSun, Yangen_US
dc.contributor.authorSun, Zhipeien_US
dc.contributor.authorSuenaga, Kazuen_US
dc.contributor.authorSakuma, Yoshikien_US
dc.contributor.authorTsukagoshi, Kazuhitoen_US
dc.contributor.authorTaniguchi, Takaakien_US
dc.contributor.departmentDepartment of Electronics and Nanoengineeringen
dc.contributor.groupauthorCentre of Excellence in Quantum Technology, QTFen
dc.contributor.groupauthorZhipei Sun Groupen
dc.contributor.organizationNational Institute for Materials Scienceen_US
dc.contributor.organizationNational Institute of Advanced Industrial Science and Technologyen_US
dc.contributor.organizationOsaka Universityen_US
dc.contributor.organizationDepartment of Electronics and Nanoengineeringen_US
dc.contributor.organizationSun Yat-sen Universityen_US
dc.contributor.organizationSaitama Universityen_US
dc.contributor.organizationAgency for Science, Technology and Researchen_US
dc.date.accessioned2024-11-06T06:20:22Z
dc.date.available2024-11-06T06:20:22Z
dc.date.embargoinfo:eu-repo/date/embargoEnd/2025-10-03en_US
dc.date.issued2024-11-12en_US
dc.descriptionPublisher Copyright: © 2024 Wiley-VCH GmbH.
dc.description.abstractLayer number-dependent band structures and symmetry are vital for the electrical and optical characteristics of 2D transition metal dichalcogenides (TMDCs). Harvesting 2D TMDCs with tunable thickness and properties can be achieved through top-down etching and bottom-up growth strategies. In this study, a pioneering technique that utilizes the migration of in situ generated Na-W-S-O droplets to etch out 1D nanotrenches in few-layer WS2 is reported. 1D WS2 nanotrenches are successfully fabricated on the optically inert bilayer WS2, showing pronounced photoluminescence and second harmonic generation signals. Additionally, the modulation of inkjet-printed Na2WO4-Na2SO4 particles to switch between the etching and growth modes by manipulating the sulfur supply is demonstrated. This versatile approach enables the creation of 1D nanochannels on 2D TMDCs. The research presents exciting prospects for the top-down and bottom-up fabrication of 1D-2D mixed-dimensional TMDC nanostructures, expanding their use for electronic and optoelectronic applications.en
dc.description.versionPeer revieweden
dc.format.mimetypeapplication/pdf
dc.identifier.citationLi, S, Lin, Y C, Chiew, Y, Dai, Y, Ning, Z, Zhang, Y, Nakajima, H, Lim, H E, Wu, J, Neitoh, Y, Okazaki, T, Sun, Y, Sun, Z, Suenaga, K, Sakuma, Y, Tsukagoshi, K & Taniguchi, T 2024, '1D Crystallographic Etching of Few-Layer WS 2', Advanced Functional Materials, vol. 34, no. 46, 2405665. https://doi.org/10.1002/adfm.202405665en
dc.identifier.doi10.1002/adfm.202405665en_US
dc.identifier.issn1616-301X
dc.identifier.issn1616-3028
dc.identifier.otherPURE UUID: 6f0a0ebd-dbf9-48cf-a707-dc12673c0d1fen_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/6f0a0ebd-dbf9-48cf-a707-dc12673c0d1fen_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/163097880/One-Dimensional_Crystallographic_Etching_of_Few-Layer_Copy.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/131521
dc.identifier.urnURN:NBN:fi:aalto-202411067037
dc.language.isoenen
dc.publisherWiley
dc.relation.ispartofseriesAdvanced Functional Materialsen
dc.relation.ispartofseriesVolume 34, issue 46en
dc.rightsopenAccessen
dc.subject.keyword1D nanotrenchesen_US
dc.subject.keywordetchingen_US
dc.subject.keywordphotoluminescenceen_US
dc.subject.keywordsecond harmonic generationen_US
dc.subject.keywordtransition metal dichalcogenidesen_US
dc.title1D Crystallographic Etching of Few-Layer WS2en
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionacceptedVersion

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