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Analysis and optimization of wide band gap semiconductors packaging
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School of Electrical Engineering |
Master's thesis
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en
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88
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Wide bandgap (WBG) semiconductors, such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are revolutionizing power electronics by supporting higher frequencies, greater power density, and elevated operating temperatures. However, to fully realize these benefits, power module packaging must be co-optimized across thermal, mechanical, and electrical domains. This thesis investigates advanced packaging strategies for WBG power modules. A comprehensive literature review was conducted to assess current trends, materials, and structures in industrial and academic WBG modules. Based on this review, key design variables influencing both performance and reliability were identified and discussed. Multiphysics finite element simulations were developed in COMSOL Multiphysics to compare thermomechanical behavior across 72 design points. Pareto front analysis and sensitivity studies were employed to quantify trade-offs and derive optimal design configurations. Results show that no single design dominates all performance domains. However, balanced configurations using Cu40Mo60 interposers and AlN substrates offer promising trade-offs between thermal resistance and mechanical stress. The findings highlight the importance of material and geometrical optimization in achieving desired performance. The study provides insights for next-generation WBG packaging design and establishes a framework for future design modifications and validation.