Facet Growth of 4He Crystals at mK Temperatures
dc.contributor | Aalto-yliopisto | fi |
dc.contributor | Aalto University | en |
dc.contributor.author | Ruutu, J. P. | |
dc.contributor.author | Hakonen, Pertti J. | |
dc.contributor.author | Babkin, A. V. | |
dc.contributor.author | Parshin, A. Ya. | |
dc.contributor.author | Penttilä, J. S. | |
dc.contributor.author | Saramäki, J. P. | |
dc.contributor.author | Tvalashvili, G. | |
dc.contributor.department | Teknillisen fysiikan laitos | fi |
dc.contributor.department | Department of Applied Physics | en |
dc.contributor.school | Perustieteiden korkeakoulu | fi |
dc.contributor.school | School of Science | en |
dc.date.accessioned | 2015-09-11T09:02:02Z | |
dc.date.available | 2015-09-11T09:02:02Z | |
dc.date.issued | 1996 | |
dc.description.abstract | We have investigated growth of c facets in good quality helium crystals with screw dislocation densities 0–20 cm exp −2 along the c axis. Three distinct regimes of growth were observed. One of them can be explained by spiral growth provided that kinetic energy of moving steps and their tendency to localization at large driving forces are taken into account. In the absence of screw dislocations we find burstlike growth unless the speed is less than 0.5 nm/s, in which case anomalous, intrinsic growth of facets is detected. | en |
dc.description.version | Peer reviewed | en |
dc.format.extent | 4187-4190 | |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Ruutu, J. P. & Hakonen, Pertti J. & Babkin, A. V. & Parshin, A. Ya. & Penttilä, J. S. & Saramäki, J. P. & Tvalashvili, G. 1996. Facet Growth of 4He Crystals at mK Temperatures. Physical Review Letters. Volume 76, Issue 22. 4187-4190. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.76.4187 | en |
dc.identifier.doi | 10.1103/physrevlett.76.4187 | |
dc.identifier.issn | 0031-9007 (printed) | |
dc.identifier.uri | https://aaltodoc.aalto.fi/handle/123456789/17651 | |
dc.identifier.urn | URN:NBN:fi:aalto-201509104256 | |
dc.language.iso | en | en |
dc.publisher | American Physical Society (APS) | en |
dc.relation.ispartofseries | Physical Review Letters | en |
dc.relation.ispartofseries | Volume 76, Issue 22 | |
dc.rights | © 1996 American Physical Society (APS). This is the accepted version of the following article: Ruutu, J. P. & Hakonen, Pertti J. & Babkin, A. V. & Parshin, A. Ya. & Penttilä, J. S. & Saramäki, J. P. & Tvalashvili, G. 1996. Facet Growth of 4He Crystals at mK Temperatures. Physical Review Letters. Volume 76, Issue 22. 4187-4190. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.76.4187, which has been published in final form at http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.76.4187. | en |
dc.rights.holder | American Physical Society (APS) | |
dc.subject.keyword | solid 4He | en |
dc.subject.keyword | facet | en |
dc.subject.keyword | interferometry | en |
dc.subject.other | Physics | en |
dc.title | Facet Growth of 4He Crystals at mK Temperatures | en |
dc.type | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä | fi |
dc.type.dcmitype | text | en |
dc.type.version | Final published version | en |
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