Facet Growth of 4He Crystals at mK Temperatures

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorRuutu, J. P.
dc.contributor.authorHakonen, Pertti J.
dc.contributor.authorBabkin, A. V.
dc.contributor.authorParshin, A. Ya.
dc.contributor.authorPenttilä, J. S.
dc.contributor.authorSaramäki, J. P.
dc.contributor.authorTvalashvili, G.
dc.contributor.departmentTeknillisen fysiikan laitosfi
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.schoolPerustieteiden korkeakoulufi
dc.contributor.schoolSchool of Scienceen
dc.date.accessioned2015-09-11T09:02:02Z
dc.date.available2015-09-11T09:02:02Z
dc.date.issued1996
dc.description.abstractWe have investigated growth of c facets in good quality helium crystals with screw dislocation densities 0–20 cm exp −2 along the c axis. Three distinct regimes of growth were observed. One of them can be explained by spiral growth provided that kinetic energy of moving steps and their tendency to localization at large driving forces are taken into account. In the absence of screw dislocations we find burstlike growth unless the speed is less than 0.5 nm/s, in which case anomalous, intrinsic growth of facets is detected.en
dc.description.versionPeer revieweden
dc.format.extent4187-4190
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRuutu, J. P. & Hakonen, Pertti J. & Babkin, A. V. & Parshin, A. Ya. & Penttilä, J. S. & Saramäki, J. P. & Tvalashvili, G. 1996. Facet Growth of 4He Crystals at mK Temperatures. Physical Review Letters. Volume 76, Issue 22. 4187-4190. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.76.4187en
dc.identifier.doi10.1103/physrevlett.76.4187
dc.identifier.issn0031-9007 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/17651
dc.identifier.urnURN:NBN:fi:aalto-201509104256
dc.language.isoenen
dc.publisherAmerican Physical Society (APS)en
dc.relation.ispartofseriesPhysical Review Lettersen
dc.relation.ispartofseriesVolume 76, Issue 22
dc.rights© 1996 American Physical Society (APS). This is the accepted version of the following article: Ruutu, J. P. & Hakonen, Pertti J. & Babkin, A. V. & Parshin, A. Ya. & Penttilä, J. S. & Saramäki, J. P. & Tvalashvili, G. 1996. Facet Growth of 4He Crystals at mK Temperatures. Physical Review Letters. Volume 76, Issue 22. 4187-4190. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.76.4187, which has been published in final form at http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.76.4187.en
dc.rights.holderAmerican Physical Society (APS)
dc.subject.keywordsolid 4Heen
dc.subject.keywordfaceten
dc.subject.keywordinterferometryen
dc.subject.otherPhysicsen
dc.titleFacet Growth of 4He Crystals at mK Temperaturesen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen
Files
Original bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
A1_ruutu_j_p_1996.pdf
Size:
317.33 KB
Format:
Adobe Portable Document Format