Facet Growth of 4He Crystals at mK Temperatures

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Journal Title
Journal ISSN
Volume Title
School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
1996
Major/Subject
Mcode
Degree programme
Language
en
Pages
4187-4190
Series
Physical Review Letters, Volume 76, Issue 22
Abstract
We have investigated growth of c facets in good quality helium crystals with screw dislocation densities 0–20 cm exp −2 along the c axis. Three distinct regimes of growth were observed. One of them can be explained by spiral growth provided that kinetic energy of moving steps and their tendency to localization at large driving forces are taken into account. In the absence of screw dislocations we find burstlike growth unless the speed is less than 0.5 nm/s, in which case anomalous, intrinsic growth of facets is detected.
Description
Keywords
solid 4He, facet, interferometry
Other note
Citation
Ruutu, J. P. & Hakonen, Pertti J. & Babkin, A. V. & Parshin, A. Ya. & Penttilä, J. S. & Saramäki, J. P. & Tvalashvili, G. 1996. Facet Growth of 4He Crystals at mK Temperatures. Physical Review Letters. Volume 76, Issue 22. 4187-4190. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.76.4187