Noise performance of the radio-frequency single-electron transistor

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorRoschier, Leif
dc.contributor.authorHakonen, Pertti J.
dc.contributor.authorBladh, K.
dc.contributor.authorDelsing, P.
dc.contributor.authorLehnert, K. W.
dc.contributor.authorSpietz, Lafe
dc.contributor.authorSchoelkopf, Rob
dc.contributor.departmentTeknillisen fysiikan laitosfi
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.schoolPerustieteiden korkeakoulufi
dc.contributor.schoolSchool of Scienceen
dc.date.accessioned2015-09-25T09:02:03Z
dc.date.available2015-09-25T09:02:03Z
dc.date.issued2004
dc.description.abstractWe have analyzed a radio-frequency single-electron-transistor (RF-SET) circuit that includes a high-electron-mobility-transistor (HEMT)amplifier, coupled to the single-electron-transistor (SET) via an impedance transformer. We consider how power is transferred between different components of the circuit, model noise components, and analyze the operating conditions of practical importance. The results are compared with experimental data on SETs. Good agreement is obtained between our noise model and the experimental results. Our analysis shows, also, that the biggest improvement to the present RF-SETs will be achieved by increasing the charging energy and by lowering the HEMT amplifier noise contribution.en
dc.description.versionPeer revieweden
dc.format.extent1274-1286
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRoschier, Leif & Hakonen, Pertti J. & Bladh, K. & Delsing, P. & Lehnert, K.W. & Spietz, Lafe & Schoelkopf, Rob. 2004. Noise performance of the radio-frequency single-electron transistor. Journal of Applied Physics. Volume 95, Issue 3. 1274-1286. ISSN 0021-8979 (printed). DOI: 10.1063/1.1635972en
dc.identifier.doi10.1063/1.1635972
dc.identifier.issn0021-8979 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/17884
dc.identifier.urnURN:NBN:fi:aalto-201509254478
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.ispartofseriesJournal of Applied Physicsen
dc.relation.ispartofseriesVolume 95, Issue 3
dc.rights© 2004 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Journal of Applied Physics, Volume 95, Issue 3 and may be found at http://scitation.aip.org/content/aip/journal/jap/95/3/10.1063/1.1635972.en
dc.rights.holderAIP Publishing
dc.subject.keywordsingle-electron transistorsen
dc.subject.keywordhigh-electron-mobility-transistorsen
dc.subject.otherPhysicsen
dc.titleNoise performance of the radio-frequency single-electron transistoren
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen

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