Noise performance of the radio-frequency single-electron transistor
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© 2004 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Journal of Applied Physics, Volume 95, Issue 3 and may be found at http://scitation.aip.org/content/aip/journal/jap/95/3/10.1063/1.1635972.
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2004
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Mcode
Degree programme
Language
en
Pages
1274-1286
Series
Journal of Applied Physics, Volume 95, Issue 3
Abstract
We have analyzed a radio-frequency single-electron-transistor (RF-SET) circuit that includes a high-electron-mobility-transistor (HEMT)amplifier, coupled to the single-electron-transistor (SET) via an impedance transformer. We consider how power is transferred between different components of the circuit, model noise components, and analyze the operating conditions of practical importance. The results are compared with experimental data on SETs. Good agreement is obtained between our noise model and the experimental results. Our analysis shows, also, that the biggest improvement to the present RF-SETs will be achieved by increasing the charging energy and by lowering the HEMT amplifier noise contribution.Description
Keywords
single-electron transistors, high-electron-mobility-transistors
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Citation
Roschier, Leif & Hakonen, Pertti J. & Bladh, K. & Delsing, P. & Lehnert, K.W. & Spietz, Lafe & Schoelkopf, Rob. 2004. Noise performance of the radio-frequency single-electron transistor. Journal of Applied Physics. Volume 95, Issue 3. 1274-1286. ISSN 0021-8979 (printed). DOI: 10.1063/1.1635972