Mechanical nanomanipulation of single strain-induced semiconductor quantum dots
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© 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap
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School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
1999
Major/Subject
Mcode
Degree programme
Language
en
Pages
358-360
Series
Applied Physics Letters, Volume 75, Issue 3
Abstract
We report on low temperatures (4 K) in situ nanomanipulation of the confining potential of single strain-induced Ga0.9In0.1 Asquantum dots. This was achieved by scanning a metalcoated tapered optical fiber tip over the self organized InP stressor islands that are responsible for the localized strain field in the GaInAs/GaAs quantum well. By scanning the tip with a shear force contact of the order of 1 nN, we thinned down the InP stressor islands in an unexpectedly reproducible and controlled way. The modification of the confining potential was directly monitored by measuring in situ the photoluminescence of each manipulated dot using a near-field scanning optical microscope.Description
Keywords
III-V semiconductors, metallic coatings, quantum dots, metal optics, near-field scanning optical microscopes, nanomanipulation
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Citation
Obermüller, C. & Deisenrieder, A. & Abstreiter, G. & Karrai, K. & Grosse, S. & Manus, S. & Feldmann, J. & Lipsanen, Harri & Sopanen, M. & Ahopelto, J. 1999. Mechanical nanomanipulation of single strain-induced semiconductor quantum dots. Applied Physics Letters. Volume 75, Issue 3. P. 358-360. ISSN 0003-6951 (printed). DOI: 10.1063/1.124374.