Ultra-thin free-standing single crystalline silicon membranes with strain control
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© 2013 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 102, Issue 19 and may be found at http://scitation.aip.org/content/aip/journal/apl/102/19/10.1063/1.4807130.
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2013
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Mcode
Degree programme
Language
en
Pages
192108/1-4
Series
Applied Physics Letters, Volume 102, Issue 19
Abstract
We report on fabrication and characterization of ultra-thin suspended single crystalline flat silicon membranes with thickness down to 6 nm. We have developed a method to control the strain in the membranes by adding a strain compensating frame on the silicon membrane perimeter to avoid buckling after the release. We show that by changing the properties of the frame the strain of the membrane can be tuned in controlled manner. Consequently, both the mechanical properties and the band structure can be engineered, and the resulting membranes provide a unique laboratory to study low-dimensional electronic, photonic, and phononic phenomena.Description
Keywords
band structure buckling, elemental semiconductors, semiconductor thin films, silicon, strain control
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Citation
Shchepetov, A. & Prunnila, M. & Alzina, F. & Schneider, L. & Cuffe, J. & Jiang, H. & Kauppinen, Esko I. & Sotomayor Torres, C. M. & Ahopelto, J.. 2013. Ultra-thin free-standing single crystalline silicon membranes with strain control. Applied Physics Letters. Volume 102, Issue 19. 192108/1-4. ISSN 0003-6951 (printed). DOI: 10.1063/1.4807130