Effect of thermal history on iron precipitation in crystalline silicon

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Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2011
Major/Subject
Mcode
Degree programme
Language
en
Pages
355-359
Series
ENERGY PROCEDIA, Volume 8
Abstract
We have studied the effect of thermal history on iron precipitation behavior in intentionally contaminated Czochralski silicon wafers that contain well-defined precipitation sites for iron, oxide precipitates. Iron precipitation was studied at a temperature range between 600°C and 700°C for various times. The results indicate that iron precipitation is strongly affected by the thermal history of the wafers. Our results also explain the disagreement observed previously in iron precipitation behavior at low temperature anneals. Finally, we discuss how the results can be applied to gettering in multicrystalline silicon.
Description
Keywords
gettering, iron, precipitation, silicon
Other note
Citation
Haarahiltunen, A, Yli-Koski, M & Savin, H 2011, ' Effect of thermal history on iron precipitation in crystalline silicon ', Energy Procedia, vol. 8, pp. 355-359 . https://doi.org/10.1016/j.egypro.2011.06.149