Positron trapping kinetics in thermally generated vacancy donor complexes in highly As-doped silicon

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date

2007

Department

Department of Applied Physics

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Language

en

Pages

5

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Physical Review B, Volume 75, issue 4, pp. 1-5

Abstract

We have measured positron lifetime and Doppler broadening in highly As-doped silicon containing thermally generated V−As3 defect complexes (vacancy is surrounded by three arsenic atoms). We observe positron detrapping from the V−As3 defect complex and determine the binding energy of 0.27eV of a positron to the complex. The results explain why 85% of the thermal vacancies formed in highly As-doped Si at temperatures over 700K are invisible to positron measurements at elevated temperatures.

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Keywords

arsenic, positron trapping, silicon, vacancy

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DOI

10.1103/PhysRevB.75.045210

Citation

Kuitunen, K, Saarinen, K & Tuomisto, F 2007, 'Positron trapping kinetics in thermally generated vacancy donor complexes in highly As-doped silicon', Physical Review B, vol. 75, no. 4, 045210, pp. 1-5. https://doi.org/10.1103/PhysRevB.75.045210

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https://urn.fi/URN:NBN:fi:aalto-202510088018

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[article-cris] Perustieteiden korkeakoulu / SCI