Transport in strongly disordered multiwalled carbon nanotubes
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© 2004 American Physical Society (APS). This is the accepted version of the following article: Tarkiainen, R. & Ahlskog, M. & Zyuzin, A. & Hakonen, Pertti J. & Paalanen, M. 2004. Transport in strongly disordered multiwalled carbon nanotubes. Physical Review B. Volume 69, Issue 3. 033402/1-4. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.69.033402, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.69.033402.
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2004
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Language
en
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033402/1-4
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Physical Review B, Volume 69, Issue 3
Abstract
We have studied magnetic field and temperature dependence of electron transport in chemical vapor deposition synthesized highly resistive multiwalled carbon nanotubes. The analysis of the weak-localization magnetoresistance according to electron-electron interaction theories leads to very small mean free paths, l<10 nm. At lowest temperatures the sheet resistance is near RK=h/e exp 2. Both of these observations suggest that our samples are close to the strong-localization limit.Description
Keywords
carbon nanotubes, electron transport
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Citation
Tarkiainen, R. & Ahlskog, M. & Zyuzin, A. & Hakonen, Pertti J. & Paalanen, M. 2004. Transport in strongly disordered multiwalled carbon nanotubes. Physical Review B. Volume 69, Issue 3. 033402/1-4. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.69.033402