Submonolayer Growth with Anomalously High Island Density in Hyperthermal Deposition
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© 2004 American Physical Society (APS). http://www.aps.org/
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2004
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en
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086103/1-4
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Physical Review Letters, Volume 92, Issue 8
Abstract
We present a rate equation model for submonolayer island growth under conditions where hyperthermal deposition techniques such as low-energy ion deposition are employed to achieve smooth layer-by-layer growth. By asymptotic analysis, we demonstrate that the model exhibits stationary behavior with well-defined dynamic and growth exponents β and χ, respectively, in the limit of small and high detachment rates. We verify these predictions by using the particle coalescence simulation method. The simulations reveal the existence of a relatively sharp transition regime with an increasing detachment rate of adatoms from high values of the growth exponent β≈1 to much smaller values of β determined by detachment and island diffusion processes. Our numerical results for the island size distribution indicate an anomalously high number of small islands, in agreement with available experimental data.Description
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submonolayer island growth, hyperthermal deposition
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Citation
Koponen, I. T. & Jahma, M. O. & Rusanen, M. & Ala-Nissilä, Tapio. 2004. Submonolayer Growth with Anomalously High Island Density in Hyperthermal Deposition. Physical Review Letters. Volume 92, Issue 8. P. 086103/1-4. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.92.086103.