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Charge sensitivity of the inductive single-electron transistor
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© 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 95, Issue 1 and may be found at
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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092502/1-3
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Applied Physics Letters, Volume 87, Issue 9
Abstract
We calculate the charge sensitivity of a recently demonstrated device where the Josephson inductance of a single Cooper-pair transistor is measured. We find that the intrinsic limit to detector performance is set by oscillatorquantum noise. Sensitivity better than 10−6e/√Hz is possible with a high Q value ∼103, or using a superconducting quantum interference deviceamplifier. The model is compared to experiment, where charge sensitivity 3×10−5e/√Hz and bandwidth 100 MHz are achieved.
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Sillanpää, Mika A. & Roschier, Leif & Hakonen, Pertti J. 2005. Charge sensitivity of the inductive single-electron transistor. Applied Physics Letters. Volume 87, Issue 9. 092502/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.2034096.