Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy
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© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters. Volume 88, Issue 14 and may be found at http://scitation.aip.org/content/aip/journal/apl/88/14/10.1063/1.2192149.
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2006
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Mcode
Degree programme
Language
en
Pages
141909/1-3
Series
Applied Physics Letters, Volume 88, Issue 14
Abstract
The effect of high-temperature high-pressure annealing on the residual strain, bending, and point defect redistribution of freestanding hydride vapor phase epitaxial GaN films was studied. The bending was found to be determined by the difference in the in-plane lattice parameters in the two faces of the films. The results showed a tendency of equalizing the lattice parameters in the two faces with increasing annealing temperature, leading to uniform strain distribution across the film thickness. A nonmonotonic behavior of structural parameters with increasing annealing temperature was revealed and related to the change in the point defect content under the high-temperature treatment.Description
Keywords
GaN, HVPE, annealing, strains
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Citation
Paskova, T. & Hommel, D. & Paskov, P. P. & Darakchieva, V. & Monemar, B. & Bockowski, M. & Suski, T. & Grzegory, I. & Tuomisto, Filip & Saarinen, K. & Ashkenov, N. & Schubert, M. 2006. Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy. Applied Physics Letters. Volume 88, Issue 14. 141909/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.2192149