Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy

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Journal Title
Journal ISSN
Volume Title
School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2006
Major/Subject
Mcode
Degree programme
Language
en
Pages
141909/1-3
Series
Applied Physics Letters, Volume 88, Issue 14
Abstract
The effect of high-temperature high-pressure annealing on the residual strain, bending, and point defect redistribution of freestanding hydride vapor phase epitaxial GaN films was studied. The bending was found to be determined by the difference in the in-plane lattice parameters in the two faces of the films. The results showed a tendency of equalizing the lattice parameters in the two faces with increasing annealing temperature, leading to uniform strain distribution across the film thickness. A nonmonotonic behavior of structural parameters with increasing annealing temperature was revealed and related to the change in the point defect content under the high-temperature treatment.
Description
Keywords
GaN, HVPE, annealing, strains
Other note
Citation
Paskova, T. & Hommel, D. & Paskov, P. P. & Darakchieva, V. & Monemar, B. & Bockowski, M. & Suski, T. & Grzegory, I. & Tuomisto, Filip & Saarinen, K. & Ashkenov, N. & Schubert, M. 2006. Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy. Applied Physics Letters. Volume 88, Issue 14. 141909/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.2192149