Electrical compensation by Ga vacancies in Ga2O3 thin films
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2015
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Language
en
Pages
3
1-3
1-3
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Applied Physics Letters, Volume 106, issue 24
Abstract
The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga2O3 thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga2O3 thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In2O3, where recent results show that n-type conductivity is not limited by cation vacancies but by other intrinsic defects such as Oi.Description
Keywords
Ga2O3, positron, vacancy
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Citation
Korhonen, E, Tuomisto, F, Gogova, D, Wagner, G, Baldini, M, Galazka, Z, Schewski, R & Albrecht, M 2015, ' Electrical compensation by Ga vacancies in Ga 2 O 3 thin films ', Applied Physics Letters, vol. 106, no. 24, 242103, pp. 1-3 . https://doi.org/10.1063/1.4922814