Nitrogen vacancies as major point defects in gallium nitride
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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Physical Review Letters, Volume 96, issue 19, pp. 1-4
Abstract
We present results of ab initio calculations for vacancies and divacancies in GaN. Particular attention is paid to nitrogen vacancies and mixed Ga-N divacancies in negatively charged states, which in n-type GaN are found to be energetically comparable with gallium vacancies. We also demonstrate that the activation energy for self-diffusion over the nitrogen sublattice is lower than over the gallium one for all Fermi-level positions, which implies the nitrogen vacancies are major defects in samples annealed at high temperatures. Possibilities for direct observations of nitrogen vacancies through positron annihilation experiments are discussed.Description
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Ganchenkova, M G & Nieminen, R 2006, 'Nitrogen vacancies as major point defects in gallium nitride', Physical Review Letters, vol. 96, no. 19, 196402, pp. 1-4. https://doi.org/10.1103/PhysRevLett.96.196402