N-type black silicon solar cells

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Authors

Date

2013

Department

Department of Micro and Nanosciences

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Mcode

Degree programme

Language

en

Pages

Series

Energy Procedia, Volume 38, pp. 866-871

Abstract

Black silicon is an interesting surface texture for solar cells because of its extremely low reflectance on a wide wavelength range and acceptance angle. In this paper we present how black silicon (b-Si) texturization can be applied on the boron doped front surface of an n-type solar cell resulting in an efficiency of 18.7%. We show that the highly boron doped emitter can be formed on black silicon without losing its good optical properties and that atomic layer deposited aluminum oxide provides good surface passivation on these boron doped b-Si emitters.

Description

VK: T40310

Keywords

black silicon, surface passivation, aluminum oxide, solar cell

Other note

DOI

10.1016/j.egypro.2013.07.358

Citation

Repo, P, Benick, J, Vähänissi, V, Schön, J, von Gastrow, G, Steinhauser, B, Schubert, M C, Hermle, M & Savin, H 2013, 'N-type black silicon solar cells', Energy Procedia, vol. 38, pp. 866-871. https://doi.org/10.1016/j.egypro.2013.07.358

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https://urn.fi/URN:NBN:fi:aalto-202510087968

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[article-cris] Sähkötekniikan korkeakoulu / ELEC