Synthesis of Extended Atomically Perfect Zigzag Graphene - Boron Nitride Interfaces
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Scientific Reports, Volume 5, pp. 1-8
Abstract
The combination of several materials into heterostructures is a powerful method for controlling material properties. The integration of graphene (G) with hexagonal boron nitride (BN) in particular has been heralded as a way to engineer the graphene band structure and implement spin- and valleytronics in 2D materials. Despite recent efforts, fabrication methods for well-defined G-BN structures on a large scale are still lacking. We report on a new method for producing atomically well-defined G-BN structures on an unprecedented length scale by exploiting the interaction of G and BN edges with a Ni(111) surface as well as each other.Description
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Drost, R, Shawulienu, K, Ervasti, M, Hämäläinen, S, Schulz, F, Harju, A & Liljeroth, P 2015, 'Synthesis of Extended Atomically Perfect Zigzag Graphene - Boron Nitride Interfaces', Scientific Reports, vol. 5, 16741, pp. 1-8. https://doi.org/10.1038/srep16741