Synthesis of Extended Atomically Perfect Zigzag Graphene - Boron Nitride Interfaces

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openAccess

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Volume Title

A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Date

2015

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Mcode

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Language

en

Pages

1-8

Series

SCIENTIFIC REPORTS, Volume 5, issue 20 Nov 2015

Abstract

The combination of several materials into heterostructures is a powerful method for controlling material properties. The integration of graphene (G) with hexagonal boron nitride (BN) in particular has been heralded as a way to engineer the graphene band structure and implement spin- and valleytronics in 2D materials. Despite recent efforts, fabrication methods for well-defined G-BN structures on a large scale are still lacking. We report on a new method for producing atomically well-defined G-BN structures on an unprecedented length scale by exploiting the interaction of G and BN edges with a Ni(111) surface as well as each other.

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Keywords

graphene, hexagonal boron nitride, scanning tunneling microscopy, Two-dimensional materials

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Citation

Drost, R, Shawulienu, K, Ervasti, M, Hämäläinen, S, Schulz, F, Harju, A & Liljeroth, P 2015, ' Synthesis of Extended Atomically Perfect Zigzag Graphene - Boron Nitride Interfaces ', Scientific Reports, vol. 5, 16741, pp. 1-8 . https://doi.org/10.1038/srep16741