Stress distribution of GaN layer grown on micro-pillar patterned GaN templates
Loading...
Access rights
openAccess
publishedVersion
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Date
Department
Major/Subject
Mcode
Degree programme
Language
en
Pages
4
Series
Applied Physics Letters, Volume 103, issue 1, pp. 1-4
Abstract
High-resolution Raman mapping of the stress distribution in an etched GaN micro-pillar template and a 5 μm thick GaN layer grown on a micro-pillar patterned GaN template is investigated. Raman mapping of the E2 (high) phonon shows differences in stress between the coalescing boundary, the top surface of the pillar region and around the GaN micro-pillar. Increased compressive stress is observed at the coalescing boundary of two adjacent GaN micro-pillars, when compared to the laterally grown GaN regions. The electron channeling contrast image reveals the reduction of threading dislocation density in the GaN layer grown on the micro-pillar patterned GaN template.Description
Keywords
Other note
Citation
Subramaniyam, N, Svensk, O, Ali, M, Naresh-Kumar, G, Trager-Cowan, C, Suihkonen, S, Sopanen, M & Lipsanen, H 2013, 'Stress distribution of GaN layer grown on micro-pillar patterned GaN templates', Applied Physics Letters, vol. 103, no. 1, 012102, pp. 1-4. https://doi.org/10.1063/1.4813077