Processing and interconnections of semiconductor sensors for photon and particle radiation detection

dc.contributorAalto Universityen
dc.contributor.advisorHärkönen Jaakko, Dr., Helsinki Institute of Physics, Finland, Prof., Ludong University, China
dc.contributor.advisorLuukka, Panja, Prof., Helsinki Institute of Physics and Lappeenranta-Lahti University of Technology, Finland
dc.contributor.authorGädda, Akiko
dc.contributor.departmentKemian ja materiaalitieteen laitosfi
dc.contributor.departmentDepartment of Chemistry and Materials Scienceen
dc.contributor.schoolKemian tekniikan korkeakoulufi
dc.contributor.schoolSchool of Chemical Technologyen
dc.contributor.supervisorFranssila, Sami, Prof., Aalto University, Department of Chemistry and Materials Science, Finland
dc.descriptionDefence is held on 5.11.2021 12:00 – 15:00
dc.description.abstractSemiconductor radiation detectors have made tremendous progress in the past few decades, increasing our understanding of physics with their detection precision. Despite these advances, there are several items that can be improved and developed. For instance, the method of sensor fabrication can be more simplified thus, the attention is given to the sensor processing this research. The detector bare module consisted of a segmented semiconductor sensor and an ASIC read-out chip (ROC). In the case of pixel detectors, the interconnection technology enables to complete a hybrid bare module. The hybrid bare module based on PSI46dig ROC read-out was used for this research with a read-out capability is 160 Mbit/s with a chip size of 7.9 × 10.3 mm2. The produced sensors were designed and fabricated in accordance with this ROC design. This thesis focuses especially on processing of sensors made of silicon and CdTe materials. Interconnection technology efforts are also emphasized as well. In particular, the research scope was to implement a more simple process introducing atomic layer deposition (ALD) thin film technology and the preparation of future higher density sensor structures. The characterization of sensors have been carried out by laboratory measurements using probe stations and transition current technique (TCT) measurements. Furthermore, functional tests of modules using different radioactive sources have been performed with a full read-out chain.en
dc.format.extent110 + app. 68
dc.identifier.isbn978-952-64-0559-9 (electronic)
dc.identifier.isbn978-952-64-0558-2 (printed)
dc.identifier.issn1799-4942 (electronic)
dc.identifier.issn1799-4934 (printed)
dc.identifier.issn1799-4934 (ISSN-L)
dc.opnCampbell, Michael Dr., CERN, Conseil européen pour la recherche nucléaire, Switzerland
dc.publisherAalto Universityen
dc.relation.haspart[Publication 1]: Gädda, J. Ott, S. Bharthuar, E. Brücken, M. Kalliokoski, A. Karadzhinova-Ferrer, M. Bezak, S. Kirschenmann, V. Litichevskyi, M. Golovleva, L. Martikainen, A. Winkler, V. Chmil, E. Tuovinen, P. Luukka, J. Härkönen. AC-coupled n-in-p pixel detectors on MCz silicon with atomic layer deposition (ALD) grown thin film. Nuclear Instruments and Methods in Physics Research A: Accelerators spectrometers detectors and associated equipment, Volume 986, Pages 164714, January 2021. Full text in Acris/Aaltodoc: DOI: 10.1016/j.nima.2020.164714
dc.relation.haspart[Publication 2]: A. Gädda, J. Ott, A. Karadzhinova-Ferrer, M. Golovlevaa, M. Kalliokoski, A. Winkler, P. Luukka, J. Härkönen. Cadmium Telluride X-ray pad detectors with different passivation dielectrics. Nuclear Instruments and Methods in Physics Research A: Accelerators spectrometers detectors and associated equipment, Volume 924, Pages 33-37, April 2019. DOI: 10.1016/j.nima.2018.08.063
dc.relation.haspart[Publication 3]: A. Gädda, A. Winkler, J. Ott, J. Härkönen, A. Karadzhinova-Ferrer, A. Koponen, P. Luukka, J. Tikkanen, S. Vähänen. Advanced processing of CdTe pixel radiation detectors. Journal of Instrumentation, Volume 12, C12031, December 2017. DOI: 10.1088/1748-0221/12/12/C12031
dc.relation.haspart[Publication 4]: J. Ott, A. Gädda, S. Bharthuar, E. Brücken, M. Golovleva, J. Härkönen, M. Kalliokoski, A. Karadzhinova-Ferrer, S. Kirschenmann, V. Litichevskyi, P. Luukka, L. Martikainen, T. Naaranoja. Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxide. Nuclear Instruments and Meth- ods in Physics Research A: Accelerators spectrometers detectors and associated equipment, Volume 958, Pages 162547, April 2020. Full text in Acris/Aaltodoc: DOI: 10.1016/j.nima.2019.162547
dc.relation.haspart[Publication 5]: S. Spannagel on behalf of CMS Tracker Collaboration. Test beam performance measurements for the Phase I upgrade of the CMS pixel detector. IOP Journal of Instrumentation, Volume 12, Pages P05022, May 2017. DOI: 10.1088/1748-0221/12/05/P05022
dc.relation.ispartofseriesAalto University publication series DOCTORAL DISSERTATIONSen
dc.relation.ispartofseriesHIP Internal Report Series
dc.revUnno, Yoshinobu, Prof Emeritus., KEK, High Energy Accelerator Research Organization, Japan
dc.revOhshima Takeshi, Dr., National Institutes for Quantum and Radiological Science and Technology, Japan
dc.subject.keywordpixel detectoren
dc.subject.keywordflip chip bondingen
dc.titleProcessing and interconnections of semiconductor sensors for photon and particle radiation detectionen
dc.typeG5 Artikkeliväitöskirjafi
dc.type.ontasotDoctoral dissertation (article-based)en
dc.type.ontasotVäitöskirja (artikkeli)fi
local.aalto.acrisexportstatuschecked 2021-11-08_1717
local.aalto.infraOtaNano - Aalto Nanofab/Micronova
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