Native point defects in GaSb

Loading...
Thumbnail Image

Access rights

© 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Journal of Applied Physics, Volume 116, Issue 14 and may be found at http://scitation.aip.org/content/aip/journal/jap/116/14/10.1063/1.4898082.

URL

Journal Title

Journal ISSN

Volume Title

School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Date

2014

Major/Subject

Mcode

Degree programme

Language

en

Pages

143508/1-6

Series

Journal of Applied Physics, Volume 116, Issue 14

Abstract

We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.

Description

Keywords

GaSb, defects, positrons

Other note

Citation

Kujala, J. & Segercrantz, N. & Tuomisto, Filip & Slotte, J. 2014. Native point defects in GaSb. Journal of Applied Physics. Volume 116, Issue 14. 143508/1-6. ISSN 0021-8979 (printed). DOI: 10.1063/1.4898082