Evaluation of some basic positron-related characteristics of SiC
Loading...
Access rights
openAccess
publishedVersion
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Date
Department
Major/Subject
Mcode
Degree programme
Language
en
Pages
6
Series
Physical Review B, Volume 54, issue 4, pp. 2512-2517
Abstract
First-principles electronic structure and positron-state calculations for perfect and defected 3C- and 6H-SiC polytypes of SiC have been performed. Monovacancies and divacancies have been treated; the influence of lattice position and nitrogen impurities have been considered in the former case. Positron affinities and binding energies have been calculated; trends are discussed, and the results compared with recent atomic superposition method calculations. Experimental determination of the electron and positron work functions of the same 6H-SiC allows an assessment of the accuracy of the present first-principles calculations, and to suggest further improvements.Description
Keywords
Other note
Citation
Brauer, G, Anwand, W, Nicht, E M, Kuriplach, J, Sob, M, Wagner, N, Coleman, P G, Puska, M J & Korhonen, T 1996, 'Evaluation of some basic positron-related characteristics of SiC', Physical Review B, vol. 54, no. 4, pp. 2512-2517. https://doi.org/10.1103/PhysRevB.54.2512