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Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/Si1-xGex/SiO2/(100)Si structures with nm-thi
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2014-02-01
Department
Department of Applied Physics
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Mcode
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Language
en
Pages
5
Series
Applied Surface Science, Volume 291, pp. 11-15
Description
| openaire: EC/FP7/261868/EU//MORDRED
Keywords
charge, defect, positron
Other note
Citation
Madia, O, Nguyen, A P D, Thoan, N H, "Afanas'ev", V, Stesmans, A, Souriau, L, Slotte, J & Tuomisto, F 2014, 'Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO 2 /Si 1-x Ge x /SiO 2 /(100)Si structures with nm-thi', Applied Surface Science, vol. 291, pp. 11-15. https://doi.org/10.1016/j.apsusc.2013.09.025