Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/Si1-xGex/SiO2/(100)Si structures with nm-thi

Thumbnail Image

Access rights

restrictedAccess

URL

Journal Title

Journal ISSN

Volume Title

A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)

Authors

Date

2014-02-01

Department

Department of Applied Physics

Major/Subject

Mcode

Degree programme

Language

en

Pages

5

Series

Applied Surface Science, Volume 291, pp. 11-15

Description

| openaire: EC/FP7/261868/EU//MORDRED

Keywords

charge, defect, positron

Other note

DOI

10.1016/j.apsusc.2013.09.025

Citation

Madia, O, Nguyen, A P D, Thoan, N H, "Afanas'ev", V, Stesmans, A, Souriau, L, Slotte, J & Tuomisto, F 2014, 'Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO 2 /Si 1-x Ge x /SiO 2 /(100)Si structures with nm-thi', Applied Surface Science, vol. 291, pp. 11-15. https://doi.org/10.1016/j.apsusc.2013.09.025

Permanent link to this item

https://urn.fi/URN:NBN:fi:aalto-201808214699

Collections

[article-cris] Perustieteiden korkeakoulu / SCI