Direct Epitaxial Growth of InP Nanowires on MoS2 with Strong Nonlinear Optical Response

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2022-10-25
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Mcode
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Language
en
Pages
7
9055-9061
Series
Chemistry of Materials, Volume 34, issue 20
Abstract
Mixed-dimensional van der Waals heterostructures are promising for research and technological advances in photonics and optoelectronics. Here we report vapor-liquid-solid (VLS) method -based van der Waals epitaxy of one-dimensional InP nanowires (NWs) directly on two-dimensional MoS2. With optimized growth parameters (V/III ratio, flow rates of precursors, and growth temperature), we successfully grow high-quality InP NWs on MoS2. The density and vertical yield of NWs on MoS2 are significantly high. Due to the unique properties of both materials, we observe strong linear and nonlinear optical responses from the NW/MoS2 heterostructures. Intriguingly, in addition to strong second and third harmonic responses, the mixed-dimensional heterostructures show odd-order high harmonic generation up to seventh order. Our findings can open new possibilities for advancing attosecond physics on a new platform of mixed-dimensional heterostructures.
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Keywords
TRANSITION-METAL DICHALCOGENIDES, DER-WAALS EPITAXY, 2-DIMENSIONAL MATERIALS, GAAS NANOWIRES, SOLAR-CELLS, EFFICIENCY, INTEGRATION, EVOLUTION
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Citation
Shafi , A M , Das , S , Khayrudinov , V , Uddin , M G , Ding , E-X , Ahmed , F , Sun , Z & Lipsanen , H 2022 , ' Direct Epitaxial Growth of InP Nanowires on MoS2 with Strong Nonlinear Optical Response ' , Chemistry of Materials , vol. 34 , no. 20 , pp. 9055-9061 . https://doi.org/10.1021/acs.chemmater.2c01602