Thermal stability of internal gettering of iron in silicon and its impact on optimization of gettering
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Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/apl
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School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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3
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Applied Physics Letters, Volume 83, Issue 21
Abstract
The redissolution behavior of gettered iron was studied in p-type Czochralski-grown silicon with a doping level of 2.5×10exp14 cm−3 and an oxide precipitate density of 5×10exp9 cm−3. The concentrations of interstitial iron and iron–boron pairs were measured by deep level transient spectroscopy. It was found that the dependence of redissolved iron concentration on annealing time can be fitted by the function C(t)=C_0[1−exp(−t/tau_diss)], and the dissolution rate tau−1diss has an Arrhenius-type temperature dependence of tau−1diss=4.01×10exp4 × exp[−(1.47±0.10) eV/k_BT] s−1. Based on this empirical equation, we predict how stable the gettered iron is during different annealing sequences and discuss implications for optimization of internal gettering.Description
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Zhang, Peng & Väinölä, Hele & Istratov, Andrei A. & Weber, Eicke R. 2003. Thermal stability of internal gettering of iron in silicon and its impact on optimization of gettering. Applied Physics Letters. Volume 83, Issue 21. 0003-6951 (printed). DOI: 10.1063/1.1630158.