Thermal stability of internal gettering of iron in silicon and its impact on optimization of gettering

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Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2003
Major/Subject
Mcode
Degree programme
Language
en
Pages
3
Series
Applied Physics Letters, Volume 83, Issue 21
Abstract
The redissolution behavior of gettered iron was studied in p-type Czochralski-grown silicon with a doping level of 2.5×10exp14 cm−3 and an oxide precipitate density of 5×10exp9 cm−3. The concentrations of interstitial iron and iron–boron pairs were measured by deep level transient spectroscopy. It was found that the dependence of redissolved iron concentration on annealing time can be fitted by the function C(t)=C_0[1−exp(−t/tau_diss)], and the dissolution rate tau−1diss has an Arrhenius-type temperature dependence of tau−1diss=4.01×10exp4 × exp[−(1.47±0.10) eV/k_BT] s−1. Based on this empirical equation, we predict how stable the gettered iron is during different annealing sequences and discuss implications for optimization of internal gettering.
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Keywords
silicon, iron, thermal stability, internal gettering, gettering stability, redissolution, p-type CZ silicon, wafer, annealing
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Citation
Zhang, Peng & Väinölä, Hele & Istratov, Andrei A. & Weber, Eicke R. 2003. Thermal stability of internal gettering of iron in silicon and its impact on optimization of gettering. Applied Physics Letters. Volume 83, Issue 21. 0003-6951 (printed). DOI: 10.1063/1.1630158.