Enhanced optical properties of in situ passivated near-surface AlxGa1-xAs/GaAs quantum wells

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date

1996

Department

Department of Micro and Nanosciences

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Mcode

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Language

en

Pages

3

Series

Applied Physics Letters, Volume 68, issue 16, pp. 2216-2218

Abstract

An epitaxial method for in situ passivation of epitaxial AlxGa1−xAs/GaAs surfaces is reported. The deposition of an ultrathin InP layer (about one monolayer) on the surface of AlxGa1−xAs/GaAs structures by metalorganic vapor phase epitaxy results in drastically reduced surface recombination. The effect is studied by low‐temperature photoluminescence of near‐surface Al0.22Ga0.78As/GaAs quantum wells where the top barrier thickness is varied from 0 to 50 nm. At the thicknesses of ≤5 nm, the intensity from passivated samples is more than four orders of magnitude larger than that obtained from unpassivated structures. For a passivated surface quantum well where InP is deposited directly onto the GaAs quantum well, we observe a blueshift of 15 meV and an intensity reduction of only a factor of 10 as compared to the luminescence from a quantum well placed at a depth of 50 nm from the surface.

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Keywords

optoelectronics, semiconductors

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DOI

10.1063/1.115863

Citation

Lipsanen, H, Sopanen, M, Taskinen, M, Tulkki, J & Ahopelto, J 1996, 'Enhanced optical properties of in situ passivated near-surface AlxGa1-xAs/GaAs quantum wells', Applied Physics Letters, vol. 68, no. 16, pp. 2216-2218. https://doi.org/10.1063/1.115863

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https://urn.fi/URN:NBN:fi:aalto-202510087570

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[article-cris] Sähkötekniikan korkeakoulu / ELEC