Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO
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© 2011 American Physical Society (APS). This is the accepted version of the following article: Look, D. C. & Leedy, K. D. & Vines, L. & Svensson, B. G. & Zubiaga, A. & Tuomisto, Filip & Doutt, D. R. & Brillson, L. J. 2011. Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO. Physical Review B. Volume 84, Issue 11. 115202/1-6. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.84.115202, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.84.115202.
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en
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115202/1-6
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Physical Review B, Volume 84, Issue 11
Abstract
Self-compensation, the tendency of a crystal to lower its energy by forming point defects to counter the effects of a dopant, is here quantitatively proven. Based on a new theoretical formalism and several different experimental techniques, we demonstrate that the addition of 1.4 × 10 exp 21-cm exp −3 Ga donors in ZnO causes the lattice to form 1.7 × 10 exp 20-cm exp −3 Zn-vacancy acceptors. The calculated VZn formation energy of 0.2 eV is consistent with predictions from density functional theory. Our formalism is of general validity and can be used to investigate self-compensation in any degenerate semiconductor material.Description
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Look, D. C. & Leedy, K. D. & Vines, L. & Svensson, B. G. & Zubiaga, A. & Tuomisto, Filip & Doutt, D. R. & Brillson, L. J. 2011. Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO. Physical Review B. Volume 84, Issue 11. 115202/1-6. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.84.115202