Transition in electron scattering mechanism in atomic layer deposited Nb:TiO2 thin films
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© 2015 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters. Volume 106, Issue 4 and may be found at http://scitation.aip.org/content/aip/journal/apl/106/4/10.1063/1.4906865.
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School of Chemical Technology |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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042101/1-4
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Applied Physics Letters, Volume 106, Issue 4
Abstract
We characterized transport and optical properties of atomic layer deposited Nb:TiO2 thin films on glass substrates. These promising transparent conducting oxide (TCO) materials show minimum resistivity of 1.0 × 10−3 Ω cm at 300 K and high transmittance in the visible range. Low-temperature (2–300 K) Hall measurements and the Drude fitting of the Vis-NIR optical spectra indicate a transition in the scattering mechanism from grain boundary scattering to intra-grain scattering with increasing Nb content, thus underlining enhancement of the grain size in the low doping regime as the key for further improved TCO properties.Description
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Niemelä, Janne-Petteri & Hirose, Yasushi & Hasegawa, Tetsuya & Karppinen, Maarit. 2015. Transition in electron scattering mechanism in atomic layer deposited Nb:TiO2 thin films. Applied Physics Letters. Volume 106, Issue 4. 042101/1-4. ISSN 0003-6951 (printed). DOI: 10.1063/1.4906865.