Luminescence from excited states in strain-induced In_(x)Ga_(1-x)As quantum dots

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Journal Title

Journal ISSN

Volume Title

A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Date

1995-05-15

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Mcode

Degree programme

Language

en

Pages

4
13868-13871

Series

PHYSICAL REVIEW B, Volume 51, issue 19

Abstract

We have fabricated quantum dots by locally straining InxGa1−xAs quantum wells with self-organized growth of nanometer-scale InP stressors on the sample surface. The structure is completed in a single growth run using metalorganic vapor-phase epitaxy. Photoluminescence from the dots is redshifted by up to 105 meV from the quantum-well peak due to the lateral confinement of excitons. Clearly resolved luminescence peaks from three excited states separated by 16–20 meV are observed when the quantum well is placed at the depth of 1–10 nm from the surface of the sample. The observed redshift and peak separation are in agreement with simple calculations using a finite-element method and two-dimensional parabolic potential model. This structure is easily fabricated and offers a great potential for the optical study of relaxation and recombination phenomena.

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Keywords

luminescence, quantum dots, semiconductors

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Citation

Lipsanen , H , Sopanen , M & Ahopelto , J 1995 , ' Luminescence from excited states in strain-induced In_(x)Ga_(1-x)As quantum dots ' , Physical Review B , vol. 51 , no. 19 , pp. 13868-13871 . https://doi.org/10.1103/PhysRevB.51.13868