Periodicity in Al/Ti superconducting single electron transistors
Loading...
Access rights
openAccess
publishedVersion
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Date
Department
Major/Subject
Mcode
Degree programme
Language
en
Pages
3
Series
Applied Physics Letters, Volume 95, issue 5, pp. 1-3
Abstract
We present experiments on single Cooper-pair transistors made of two different superconducting materials. We chose Ti and Al to create an energy gap profile such that the island has a higher gap than the leads, thereby acting as a barrier to quasiparticle tunneling. Our transport measurements demonstrate that quasiparticle poisoning is suppressed in all our TiAlTi structures (higher gap for the island) with clear 2e periodicity observed, whereas full quasiparticle poisoning is observed in all AlTiAl devices (higher gap for the leads) with e periodicity.Description
Other note
Citation
MacLeod, S J, Kafanov, S & Pekola, J P 2009, 'Periodicity in Al/Ti superconducting single electron transistors', Applied Physics Letters, vol. 95, no. 5, 052503, pp. 1-3. https://doi.org/10.1063/1.3194777