Clustering of vacancy defects in high-purity semi-insulating SiC
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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8
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Physical Review B, Volume 75, issue 8, pp. 1-8
Abstract
Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of four to five missing atoms and (ii) Si-vacancy-related negatively charged defects. The total open volume bound to the clusters anticorrelates with the electrical resistivity in both as-grown and annealed materials. Our results suggest that Si-vacancy-related complexes electrically compensate the as-grown material, but migrate to increase the size of the clusters during annealing, leading to loss of resistivity.Description
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Aavikko, R, Saarinen, K, Tuomisto, F, Magnusson, B, Son, N T & Janzen, E 2007, 'Clustering of vacancy defects in high-purity semi-insulating SiC', Physical Review B, vol. 75, no. 8, 085208, pp. 1-8. https://doi.org/10.1103/PhysRevB.75.085208