Agglomeration of As Antisites in As-Rich Low-Temperature GaAs: Nucleation without a Critical Nucleus Size
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© 2005 American Physical Society (APS). This is the accepted version of the following article: Staab, T. E. M. & Nieminen, Risto M. & Luysberg, M. & Frauenheim, Th. 2005. Agglomeration of As Antisites in As-Rich Low-Temperature GaAs: Nucleation without a Critical Nucleus Size. Physical Review Letters. Volume 95, Issue 12. 125502/1-4. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.95.125502, which has been published in final form at http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.95.125502.
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2005
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Language
en
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125502/1-4
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Physical Review Letters, Volume 95, Issue 12
Abstract
To investigate the early stages of nucleation and growth of As precipitates in GaAs grown at low substrate temperature, we make use of a self-consistent-charge density-functional based tight-binding method. Since a pair of As antisites already shows a significant binding energy which increases when more As antisites are attached, there is no critical nucleus size. Provided that all excess As has precipitated, the clusters may grow in size since the binding energies increase with increasing agglomeration size. These findings close the gap between experimental investigation of point defects and the detection of nanometer-size precipitates in transmission electron microscopy.Description
Keywords
GaAs, As precipitates, nucleation, growth
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Citation
Staab, T. E. M. & Nieminen, Risto M. & Luysberg, M. & Frauenheim, Th. 2005. Agglomeration of As Antisites in As-Rich Low-Temperature GaAs: Nucleation without a Critical Nucleus Size. Physical Review Letters. Volume 95, Issue 12. 125502/1-4. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.95.125502.