STM topography and manipulation of single Au atoms on Si(100)
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© 2009 American Physical Society (APS). This is the accepted version of the following article: Chiaravalloti, F. ; Riedel, D. ; Dujardin, G. ; Pinto, H. P. ; Foster, Adam S.. 2009. STM topography and manipulation of single Au atoms on Si(100). Physical Review B. Volume 79, Issue 24. 245431/1-5. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.79.245431, which has been published in final form at http://journals.aps.org/prb/pdf/10.1103/PhysRevB.79.245431.
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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245431/1-5
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Physical Review B, Volume 79, Issue 24
Abstract
The low-temperature (12 K) adsorption of single Au atoms on Si(100) is studied by scanning tunneling microscopy (STM). Comparison between experimental and calculated STM topographies as well as density-functional-theory calculations of the adsorption energies enable us to identify two adsorption configurations of Au atoms between Si-dimer rows (BDRs) and on top of Si-dimer rows (TDRs). In both adsorption configurations, the Au atoms are covalently bound to two Si atoms through a partial electron transfer from Si to Au. STM manipulation confirms that the TDR adsorption configuration is metastable, whereas the BDR one is the most stable configuration.Description
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Chiaravalloti, F. & Riedel, D. & Dujardin, G. & Pinto, H. P. & Foster, Adam S.. 2009. STM topography and manipulation of single Au atoms on Si(100). Phys. Rev. B. Volume 79, Issue 24. 245431/1-5. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.79.245431.