Pauli-blocking imaging of single strain-induced semiconductor quantum dots
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© 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap
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School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
1999
Major/Subject
Mcode
Degree programme
Language
en
Pages
3200-3202
Series
Applied Physics Letters, Volume 74, Issue 21
Abstract
The photoluminescence(PL) of InP strained-induced quantum dots in a GaInAs/GaAs quantum well is measured at low temperature (4.2 K) using near-field scanning optical microscopy. The PL originating from the first three confined levels of eight individual dots is mapped out over an area of 1.4×1.4 μm. The spatial resolution of the PL of the lowest energy level is found to be limited to about 0.5 μm. In contrast, the mapping of the PL of the higher excited state shows a much improved spatial resolution of the order of 150 nm which is the instrument resolution. This effect is understood in terms of Pauli-blocking of the dot level filling.Description
Keywords
photoluminescence, quantum dots, III-V semiconductors, spatial resolution, near-field scanning optical microscopy, nanostructures, optical spectroscopy
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Citation
Obermüller, C. & Deisenrieder, A. & Abstreiter, G. & Karrai, K. & Grosse, S. & Manus, S. & Feldmann, J. & Lipsanen, Harri & Sopanen, M. & Ahopelto, J. 1999. Pauli-blocking imaging of single strain-induced semiconductor quantum dots. Applied Physics Letters. Volume 74, Issue 21. P. 3200-3202. ISSN 0003-6951 (printed). DOI: 10.1063/1.124116.