Optical metrology of 3D thin film conformality by LHAR chip assisted method

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorUtriainen, Mikkoen_US
dc.contributor.authorSaastamoinen, Kimmoen_US
dc.contributor.authorRekola, Heikkien_US
dc.contributor.authorYlivaara, Oili M.E.en_US
dc.contributor.authorPuurunen, Riikka L.en_US
dc.contributor.authorHyttinen, Pasien_US
dc.contributor.departmentDepartment of Chemical and Metallurgical Engineeringen
dc.contributor.editorBusse, Lynda E.en_US
dc.contributor.editorSoskind, Yakoven_US
dc.contributor.editorMock, Patrick C.en_US
dc.contributor.groupauthorCatalysisen
dc.contributor.organizationChipmetrics Ltden_US
dc.contributor.organizationUniversity of Eastern Finlanden_US
dc.contributor.organizationVTT Technical Research Centre of Finlanden_US
dc.date.accessioned2022-06-15T06:40:04Z
dc.date.available2022-06-15T06:40:04Z
dc.date.issued2022-03-05en_US
dc.descriptionPublisher Copyright: © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.
dc.description.abstractThe paper presents a novel and fast method to characterize thin film conformality on microscopic 3D High Aspect Ratio substrates. The thin film deposition experiment uses specially designed PillarHall(TM) Lateral High Aspect Ratio (LHAR) silicon chip as a substrate. The measurement on a chip relies on the conventional planar surface characterization tools such as optical microscopy, line-scan reflectometry and ellipsometry. The results show that the method is fast and accurate way to characterize thin film conformality as well as other film properties, and also in wafer-level.en
dc.description.versionPeer revieweden
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationUtriainen, M, Saastamoinen, K, Rekola, H, Ylivaara, O M E, Puurunen, R L & Hyttinen, P 2022, Optical metrology of 3D thin film conformality by LHAR chip assisted method. in L E Busse, Y Soskind & P C Mock (eds), Photonic Instrumentation Engineering IX., 120080D, Proceedings of SPIE - The International Society for Optical Engineering, vol. 12008, SPIE, SPIE Photonics West, San Francisco, California, United States, 22/01/2022. https://doi.org/10.1117/12.2609643en
dc.identifier.doi10.1117/12.2609643en_US
dc.identifier.isbn978-1-5106-4887-6
dc.identifier.issn0277-786X
dc.identifier.issn1996-756X
dc.identifier.otherPURE UUID: bf2538ed-f136-4eaa-80b8-55be720df94een_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/bf2538ed-f136-4eaa-80b8-55be720df94een_US
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=85131219362&partnerID=8YFLogxK
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/84468163/CHEM_Utriainen_et_al_Optical_metrology_2022_Proc_SPIE_12008.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/114980
dc.identifier.urnURN:NBN:fi:aalto-202206153822
dc.language.isoenen
dc.relation.ispartofSPIE Photonics Westen
dc.relation.ispartofseriesPhotonic Instrumentation Engineering IXen
dc.relation.ispartofseriesProceedings of SPIE - The International Society for Optical Engineering ; Volume 12008en
dc.rightsopenAccessen
dc.subject.keywordALDen_US
dc.subject.keywordConformalen_US
dc.subject.keywordHigh Aspect Ratioen_US
dc.subject.keywordLHARen_US
dc.titleOptical metrology of 3D thin film conformality by LHAR chip assisted methoden
dc.typeA4 Artikkeli konferenssijulkaisussafi
dc.type.versionpublishedVersion

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