Optical metrology of 3D thin film conformality by LHAR chip assisted method
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A4 Artikkeli konferenssijulkaisussa
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Date
2022-03-05
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en
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Photonic Instrumentation Engineering IX, Proceedings of SPIE - The International Society for Optical Engineering ; Volume 12008
Abstract
The paper presents a novel and fast method to characterize thin film conformality on microscopic 3D High Aspect Ratio substrates. The thin film deposition experiment uses specially designed PillarHall(TM) Lateral High Aspect Ratio (LHAR) silicon chip as a substrate. The measurement on a chip relies on the conventional planar surface characterization tools such as optical microscopy, line-scan reflectometry and ellipsometry. The results show that the method is fast and accurate way to characterize thin film conformality as well as other film properties, and also in wafer-level.Description
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Keywords
ALD, Conformal, High Aspect Ratio, LHAR
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Citation
Utriainen, M, Saastamoinen, K, Rekola, H, Ylivaara, O M E, Puurunen, R L & Hyttinen, P 2022, Optical metrology of 3D thin film conformality by LHAR chip assisted method . in L E Busse, Y Soskind & P C Mock (eds), Photonic Instrumentation Engineering IX ., 120080D, Proceedings of SPIE - The International Society for Optical Engineering, vol. 12008, SPIE, SPIE Photonics West, San Francisco, California, United States, 22/01/2022 . https://doi.org/10.1117/12.2609643