Fabrication of GaInAs quantum disks using self-organized InP islands as a mask in wet chemical etching
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© 1996 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap
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School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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4029-4031
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Applied Physics Letters, Volume 69, Issue 26
Abstract
GaInAs quantum disks are fabricated by wet chemical etching from a GaInAs/GaAs near‐surface quantum well using self‐organized InP islands as an etch mask. InP islands are formed in coherent Stranski–Krastanow growth mode by metalorganic vapor phase epitaxy. The free‐standing GaInAs/GaAs columns, produced by a three‐step etching process, are overgrown at 550 °C. The luminescence efficiency per emitting area from the regrown quantum disks is one order of magnitude larger than that from a regrown reference quantum well.Description
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Citation
Sopanen, M. & Lipsanen, Harri & Ahopelto, J. 1996. Fabrication of GaInAs quantum disks using self-organized InP islands as a mask in wet chemical etching. Applied Physics Letters. Volume 69, Issue 26. P. 4029-4031. ISSN 0003-6951 (printed). DOI: 10.1063/1.117860.