Transition in electron scattering mechanism in atomic layer deposited Nb:TiO2 thin films
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Applied Physics Letters, Volume 106, issue 4, pp. 1-4
Abstract
We characterized transport and optical properties of atomic layer deposited Nb:TiO2 thin films on glass substrates. These promising transparent conducting oxide (TCO) materials show minimum resistivity of 1.0 × 10−3 Ω cm at 300 K and high transmittance in the visible range. Low-temperature (2–300 K) Hall measurements and the Drude fitting of the Vis-NIR optical spectra indicate a transition in the scattering mechanism from grain boundary scattering to intra-grain scattering with increasing Nb content, thus underlining enhancement of the grain size in the low doping regime as the key for further improved TCO properties.Description
| openaire: EC/FP7/339478/EU//LAYERENG-HYBMAT
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Niemelä, J-P, Hirose, Y, Hasegawa, T & Karppinen, M 2015, 'Transition in electron scattering mechanism in atomic layer deposited Nb:TiO2 thin films', Applied Physics Letters, vol. 106, no. 4, 042101, pp. 1-4. https://doi.org/10.1063/1.4906865