Demonstration of electron focusing using electronic lenses in low-dimensional system

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Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2020-02-13
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Language
en
Pages
7
Series
Scientific Reports, Volume 10, issue 1
Abstract
We report an all-electric integrable electron focusing lens in n-type GaAs. It is shown that a pronounced focusing peak takes place when the focal point aligns with an on-chip detector. The intensity and full width half maximum (FWHM) of the focusing peak are associated with the collimation of injected electrons. To demonstrate the reported focusing lens can be a useful tool, we investigate the characteristic of an asymmetrically gate biased quantum point contact with the assistance of a focusing lens. A correlation between the occurrence of conductance anomaly in low conductance regime and increase in FWHM of focusing peak is observed. The correlation is likely due to the electron-electron interaction. The reported electron focusing lens is essential for a more advanced electron optics device.
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Yan , C , Pepper , M , See , P , Farrer , I , Ritchie , D & Griffiths , J 2020 , ' Demonstration of electron focusing using electronic lenses in low-dimensional system ' , Scientific Reports , vol. 10 , no. 1 , 2593 . https://doi.org/10.1038/s41598-020-59453-x