Demonstration of electron focusing using electronic lenses in low-dimensional system

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Date

2020-02-13

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en

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7

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Scientific Reports, Volume 10, issue 1

Abstract

We report an all-electric integrable electron focusing lens in n-type GaAs. It is shown that a pronounced focusing peak takes place when the focal point aligns with an on-chip detector. The intensity and full width half maximum (FWHM) of the focusing peak are associated with the collimation of injected electrons. To demonstrate the reported focusing lens can be a useful tool, we investigate the characteristic of an asymmetrically gate biased quantum point contact with the assistance of a focusing lens. A correlation between the occurrence of conductance anomaly in low conductance regime and increase in FWHM of focusing peak is observed. The correlation is likely due to the electron-electron interaction. The reported electron focusing lens is essential for a more advanced electron optics device.

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Yan, C, Pepper, M, See, P, Farrer, I, Ritchie, D & Griffiths, J 2020, 'Demonstration of electron focusing using electronic lenses in low-dimensional system', Scientific Reports, vol. 10, no. 1, 2593. https://doi.org/10.1038/s41598-020-59453-x