Preventing light-induced degradation in multicrystalline silicon

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date

2014

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Department of Micro and Nanosciences

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en

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Journal of Applied Physics, Volume 115, issue 15

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Keywords

aluminium, copper, illumination, ozone, semiconductor device characterization

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DOI

10.1063/1.4871404

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Lindroos, J, Boulfrad, Y, Yli-Koski, M & Savin, H 2014, 'Preventing light-induced degradation in multicrystalline silicon', Journal of Applied Physics, vol. 115, no. 15. https://doi.org/10.1063/1.4871404

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https://urn.fi/URN:NBN:fi:aalto-202510087802

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[article-cris] Sähkötekniikan korkeakoulu / ELEC