Tensile-strained GaAsN quantum dots on InP

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorPohjola, P.
dc.contributor.authorHakkarainen, T.
dc.contributor.authorKoskenvaara, H.
dc.contributor.authorSopanen, Markku
dc.contributor.authorLipsanen, Harri
dc.contributor.authorSainio, J.
dc.contributor.departmentDepartment of Micro and Nanosciencesen
dc.contributor.departmentMikro- ja nanotekniikan laitosfi
dc.contributor.schoolSähkötekniikan korkeakoulufi
dc.contributor.schoolSchool of Electrical Engineeringen
dc.date.accessioned2015-05-04T09:01:20Z
dc.date.available2015-05-04T09:01:20Z
dc.date.issued2007
dc.description.abstractSelf-assembled quantum dots are typically fabricated from compressive-strained material systems, e.g., InAs on GaAs. In this letter, self-assembled quantum dots from tensile-strained GaAsN on InP are demonstrated. GaAsN on InP has type-I band alignment. Stranski-Krastanov growth mode is not observed, but in situannealing of the uncapped samples results in the formation of islands. Photoluminescence spectra from the buried GaAsN show separate peaks due to a wetting layer and islands around the energies of 1.3 and 1.1eV, respectively.en
dc.description.versionPeer revieweden
dc.format.extent172110/1-3
dc.format.mimetypeapplication/pdfen
dc.identifier.citationPohjola, P. & Hakkarainen, T. & Koskenvaara, H. & Sopanen, M. & Lipsanen, Harri & Sainio, J. 2007. Tensile-strained GaAsN quantum dots on InP. Applied Physics Letters. Volume 90, Issue 17. P. 172110/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.2719662.en
dc.identifier.doi10.1063/1.2719662
dc.identifier.issn0003-6951 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/15865
dc.identifier.urnURN:NBN:fi:aalto-201505042530
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseriesVolume 90, Issue 17
dc.rights© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/japen
dc.rights.holderAmerican Institute of Physics
dc.subject.keywordquantum dotsen
dc.subject.keywordannealingen
dc.subject.keywordIII‐V semiconductorsen
dc.subject.keywordwettingen
dc.subject.keywordquantum wellsen
dc.subject.otherPhysicsen
dc.titleTensile-strained GaAsN quantum dots on InPen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen
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