Tensile-strained GaAsN quantum dots on InP
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© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap
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School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2007
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Mcode
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Language
en
Pages
172110/1-3
Series
Applied Physics Letters, Volume 90, Issue 17
Abstract
Self-assembled quantum dots are typically fabricated from compressive-strained material systems, e.g., InAs on GaAs. In this letter, self-assembled quantum dots from tensile-strained GaAsN on InP are demonstrated. GaAsN on InP has type-I band alignment. Stranski-Krastanov growth mode is not observed, but in situannealing of the uncapped samples results in the formation of islands. Photoluminescence spectra from the buried GaAsN show separate peaks due to a wetting layer and islands around the energies of 1.3 and 1.1eV, respectively.Description
Keywords
quantum dots, annealing, III‐V semiconductors, wetting, quantum wells
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Citation
Pohjola, P. & Hakkarainen, T. & Koskenvaara, H. & Sopanen, M. & Lipsanen, Harri & Sainio, J. 2007. Tensile-strained GaAsN quantum dots on InP. Applied Physics Letters. Volume 90, Issue 17. P. 172110/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.2719662.