Radiation-induced alloy rearrangement in InxGa1− xN
| dc.contributor | Aalto-yliopisto | fi |
| dc.contributor | Aalto University | en |
| dc.contributor.author | Prozheeva, V. | en_US |
| dc.contributor.author | Makkonen, I. | en_US |
| dc.contributor.author | Cuscó, R. | en_US |
| dc.contributor.author | Artús, L. | en_US |
| dc.contributor.author | Dadgar, A. | en_US |
| dc.contributor.author | Plazaola, F. | en_US |
| dc.contributor.author | Tuomisto, F. | en_US |
| dc.contributor.department | Department of Applied Physics | en |
| dc.contributor.groupauthor | Antimatter and Nuclear Engineering | en |
| dc.contributor.organization | Department of Applied Physics | en_US |
| dc.contributor.organization | CSIC | en_US |
| dc.contributor.organization | Otto von Guericke University Magdeburg | en_US |
| dc.contributor.organization | University of the Basque Country | en_US |
| dc.date.accessioned | 2017-05-03T12:02:29Z | |
| dc.date.available | 2017-05-03T12:02:29Z | |
| dc.date.embargo | info:eu-repo/date/embargoEnd/2018-03-31 | en_US |
| dc.date.issued | 2017-03-27 | en_US |
| dc.description.abstract | The effect of radiation damage on the defect and alloy structure in InxGa1− xN thin films grown on Si substrates was studied using positron annihilation spectroscopy. Prior to the measurements, the samples were subjected to double He+ implantation at 40 and 100 keV. The results show the presence of cation vacancy-like defects in high concentrations (>1018 cm−3) already in the as-grown samples. The evolution of the annihilation characteristics after the implantation suggests strong alloy disorder rearrangement under irradiation. | en |
| dc.description.version | Peer reviewed | en |
| dc.format.extent | 1-4 | |
| dc.format.mimetype | application/pdf | en_US |
| dc.identifier.citation | Prozheeva, V, Makkonen, I, Cuscó, R, Artús, L, Dadgar, A, Plazaola, F & Tuomisto, F 2017, ' Radiation-induced alloy rearrangement in In x Ga 1− x N ', Applied Physics Letters, vol. 110, no. 13, 132104, pp. 1-4 . https://doi.org/10.1063/1.4979410 | en |
| dc.identifier.doi | 10.1063/1.4979410 | en_US |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.issn | 1077-3118 | |
| dc.identifier.other | PURE UUID: 3dcfe518-522d-4e0d-a1f7-b14804d4b4e8 | en_US |
| dc.identifier.other | PURE ITEMURL: https://research.aalto.fi/en/publications/3dcfe518-522d-4e0d-a1f7-b14804d4b4e8 | en_US |
| dc.identifier.other | PURE LINK: http://www.scopus.com/inward/record.url?scp=85016490030&partnerID=8YFLogxK | en_US |
| dc.identifier.other | PURE FILEURL: https://research.aalto.fi/files/11611305/_pdf_archive_APPLAB_vol_110_iss_13_132104_1_am.pdf | en_US |
| dc.identifier.uri | https://aaltodoc.aalto.fi/handle/123456789/25371 | |
| dc.identifier.urn | URN:NBN:fi:aalto-201705033772 | |
| dc.language.iso | en | en |
| dc.relation.ispartofseries | Applied Physics Letters | en |
| dc.relation.ispartofseries | Volume 110, issue 13 | en |
| dc.rights | openAccess | en |
| dc.title | Radiation-induced alloy rearrangement in InxGa1− xN | en |
| dc.type | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä | fi |
| dc.type.version | acceptedVersion |